bl galaxy electrical production specification npn silicon epitaxial planar transistor S9016 document number: bl/ssstc127 www.galaxycn.com rev.a 1 features pb lead-free z collector current.(i c = 25ma z power dissipation.(p c =200mw) applications z am converter, fm/rm amplifier of low noise. sot-23 ordering information type no. marking package code S9016 y2 sot-23 maximum rating @ ta=25 unless otherwise specified symbol parameter value units v cbo collector-base voltage 30 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 4 v i c collector current -continuous 25 ma p c collector dissipation 200 mw t j, t stg junction and storage temperature -55~150 electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =0.1ma,i b =0 b 20 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 4 v collector cut-off current i cbo v cb =30v,i e =0 0.1 a emitter cut-off current i ebo v eb =3v,i c =0 0.1 a dc current gain h fe v ce =5v,i c =1ma 28 198 collector-emitter saturation voltage v ce(sat) i c =10ma, i b = 1ma b 0.3 v transition frequency f t v ce =5v, i c = 1ma 400 mhz output capacitance c ob v cb =10v, i e =0,f=1mhz 1.6 pf
bl galaxy electrical production specification npn silicon epitaxial planar transistor S9016 document number: bl/ssstc127 www.galaxycn.com rev.a 2 typical characteristics @ ta=25 unless otherwise specified
bl galaxy electrical production specification npn silicon epitaxial planar transistor S9016 document number: bl/ssstc127 www.galaxycn.com rev.a 3 package outline plastic surface mounted package sot-23 sot-23 dim min max a 2.85 2.95 b 1.25 1.35 c 1.0typical d 0.37 0.43 e 0.35 0.48 g 1.85 1.95 h 0.02 0.1 j 0.1typical k 2.35 2.45 all dimensions in mm soldering footprint unit : mm g k h j e d c b a package information device package shipping S9016 sot-23 3000/tape&reel
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